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            N通道高級功率mosfet--RU207C
            N通道高級功率mosfet--RU207C
            * 20V/6A, RDS (ON) =10mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V * Low RDS (ON) * Super High Dense Cell Design * Reliable and Rugged * Lead Free...
            N通道超級溝槽ii功率mosfet--NCEP058N85D
            N通道超級溝槽ii功率mosfet--NCEP058N85D
            The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both c...
            增強型功率mosN溝道--NCE4080K
            增強型功率mosN溝道--NCE4080K
            The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
            N溝道增強型功率mosfet--NCE3010S
            N溝道增強型功率mosfet--NCE3010S
            The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
            龍騰12A,N渠道650V超級MOS管--LND12N65
            龍騰12A,N渠道650V超級MOS管--LND12N65
            Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
            龍騰10A,N渠道650V超級MOS管--LND10N65
            龍騰10A,N渠道650V超級MOS管--LND10N65
            Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performanc...
            龍騰N渠道650V,4A超級MOS管--LND4N65
            龍騰N渠道650V,4A超級MOS管--LND4N65
            The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...
            龍騰N渠道650V,16A超級MOS管--LND16N65
            龍騰N渠道650V,16A超級MOS管--LND16N65
            Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
            龍騰N渠道650V,7A超級MOS管--LND7N65D
            龍騰N渠道650V,7A超級MOS管--LND7N65D
            The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...
            龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
            龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
            Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
            MOS管--NCE3407A
            MOS管--NCE3407A
            Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...
            新潔能MOS管--NCE3407
            新潔能MOS管--NCE3407
            MOS管--3407 封裝是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).
            10A、650V N溝道增強型場效應管--SVF10N65T/F/K/S
            10A、650V N溝道增強型場效應管--SVF10N65T/F/K/S
            SVF10N65T/F/K/S N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。
            7A、650V N溝道增強型場效應管--SVF7N65T/F/K/S
            7A、650V N溝道增強型場效應管--SVF7N65T/F/K/S
            SVF4N65T/F/K/S N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。
            5A、600V N溝道增強型場效應管--SVF5N60T/F/D/MJ/K
            5A、600V N溝道增強型場效應管--SVF5N60T/F/D/MJ/K
            SVF5N60T/F/D/MJ/K N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。
            4A、650V N溝道增強型場效應管--SVF4N65T/F/M/MJ/D/K
            4A、650V N溝道增強型場效應管--SVF4N65T/F/M/MJ/D/K
            SVF4N65T/F/M/MJ/D/K N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。
            3A、800V N溝道增強型場效應管--SVF3N80M/MJ/F/D
            3A、800V N溝道增強型場效應管--SVF3N80M/MJ/F/D
            SVF3N80M/MJ/F/D N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。
            12A、650V N溝道增強型場效應管--SVF12N65T/F/K/S
            12A、650V N溝道增強型場效應管--SVF12N65T/F/K/S
            SVF12N65T/F/K/S N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子F-CellTM平面高壓VDMOS 工藝技術制造。
            7A、800V N溝道增強型場效應管--SVF7N80T/F
            7A、800V N溝道增強型場效應管--SVF7N80T/F
            SVF7N80T/F N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子F-CellTM平面高壓VDMOS 工藝技術制造。
            2A、600V N溝道增強型場效應管--SVF2N60M/MJ/N/F/T/D
            2A、600V N溝道增強型場效應管--SVF2N60M/MJ/N/F/T/D
            SVF2N60M/MJ/N/F/T/D N溝道增強型高壓功率 MOS 場效應晶體管采用士蘭微電子的 F-CellTM平面高壓VDMOS 工藝技術制造。
            記錄總數:43 | 頁數:3123  
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