5A 800V N溝道增強型場效應管--SVF5N80F/T/MJ/K

SVF5N80F/T/MJ/K N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面VDMOS工藝技術制造。工藝及條狀的原胞設計結構使得該產品具有較低的導通電阻、優越的開關性能及很高的雪崩擊穿耐量。 該產品可廣泛應用于AC-DC開關電源,DC-DC電源轉換器，高壓H橋PWM馬達驅動。

N通道高級功率mosfet--RU207C

* 20V/6A, RDS (ON) =10mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V * Low RDS (ON) * Super High Dense Cell Design * Reliable and Rugged * Lead Free...

N通道超級溝槽ii功率mosfet--NCEP058N85D

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both c...

增強型功率mosN溝道--NCE4080K

The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

N溝道增強型功率mosfet--NCE3010S

The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

龍騰12A,N渠道650V超級MOS管--LND12N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龍騰10A,N渠道650V超級MOS管--LND10N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performanc...

龍騰N渠道650V,4A超級MOS管--LND4N65

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...

龍騰N渠道650V,16A超級MOS管--LND16N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龍騰N渠道650V,7A超級MOS管--LND7N65D

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...

龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

650V MOS管--NCE65R900I,NCE65R900K

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

新潔能MOS:NCE65R900,NCE65R900D,NCE65R900F

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

MOS管650V--NCE65R1K2Z

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE65R1K2,NCE65R1K2D,NCE65R1K2F

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE65R1K2I,NCE65R1K2K

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE65R2K4I,NCE65R2K4K

General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...

NCE65R540I, NCE65R540K

General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...

MOS管--NCE3407A

Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...

新潔能MOS管--NCE3407

MOS管--3407 封裝是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).