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            中銘電子解決方案
            5A 800V N溝道增強型場效應管--SVF5N80F/T/MJ/K
            5A 800V N溝道增強型場效應管--SVF5N80F/T/MJ/K
            SVF5N80F/T/MJ/K N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面VDMOS工藝技術制造。工藝及條狀的原胞設計結構使得該產品具有較低的導通電阻、優越的開關性能及很高的雪崩擊穿耐量。 該產品可廣泛應用于AC-DC開關電源,DC-DC電源轉換器,高壓H橋PWM馬達驅動。
            650V MOS管--NCE65R900I,NCE65R900K
            650V MOS管--NCE65R900I,NCE65R900K
            The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
            新潔能MOS:NCE65R900,NCE65R900D,NCE65R900F
            新潔能MOS:NCE65R900,NCE65R900D,NCE65R900F
            The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
            MOS管650V--NCE65R1K2Z
            MOS管650V--NCE65R1K2Z
            The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
            NCE65R1K2,NCE65R1K2D,NCE65R1K2F
            NCE65R1K2,NCE65R1K2D,NCE65R1K2F
            The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
            NCE65R1K2I,NCE65R1K2K
            NCE65R1K2I,NCE65R1K2K
            The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
            NCE65R2K4I,NCE65R2K4K
            NCE65R2K4I,NCE65R2K4K
            General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...
            NCE65R540I, NCE65R540K
            NCE65R540I, NCE65R540K
            General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...
            7A,700V DP MOS功率管--SVS7N70M/MJ/F
            7A,700V DP MOS功率管--SVS7N70M/MJ/F
            SVS7N70M/MJ/F N溝道增強高壓功率MOSFET采用士蘭微電子DP MOS技術新平臺制造,具有很低的傳導損耗和開關損耗。
            7A,650V DP MOS功率管--SVS7N65F/D
            7A,650V DP MOS功率管--SVS7N65F/D
            SVS7N65F/D N溝道增強高壓功率MOSFET采用士蘭微電子DP MOS技術新平臺制造,具有很低的傳導損耗和開關損耗。
            7A,600V DP MOS功率管--SVS7N60D/F
            7A,600V DP MOS功率管--SVS7N60D/F
            SVS7N60D/F N溝道增強高壓功率MOSFET采用士蘭微電子DP MOS技術新平臺制造,具有很低的傳導損耗和開關損耗。
            6A,700V DP MOS功率管--SVS6N70M/MJ/D
            6A,700V DP MOS功率管--SVS6N70M/MJ/D
            SVS6N70M/MJ/D N溝道增強高壓功率MOSFET采用士蘭微電子DP MOS技術新平臺制造,具有很低的傳導損耗和開關損耗。
            6A,650V DP MOS功率管--SVS6N65F
            6A,650V DP MOS功率管--SVS6N65F
            SVS6N65F N溝道增強高壓功率MOSFET采用士蘭微電子DP MOS技術新平臺制造,具有很低的傳導損耗和開關損耗。
            6A,600V DP MOS功率管--SVS6N60F/D/T/M/MJ
            6A,600V DP MOS功率管--SVS6N60F/D/T/M/MJ
            SVS6N60F/D/T/M/MJ N溝道增強高壓功率MOSFET采用士蘭微電子DP MOS技術新平臺制造,具有很低的傳導損耗和開關損耗。
            4A,650V DP MOS功率管--SVS4N65F/D/MJ
            4A,650V DP MOS功率管--SVS4N65F/D/MJ
            SVS4N65F/D/MJ N溝道增強高壓功率MOSFET采用士蘭微電子DP MOS技術新平臺制造,具有很低的傳導損耗和開關損耗。
            4A,600V DP MOS功率管--SVS4N60F/D/MJ
            4A,600V DP MOS功率管--SVS4N60F/D/MJ
            SVS4N60F/D/MJ N溝道增強高壓功率MOSFET采用士蘭微電子DP MOS技術新平臺制造,具有很低的傳導損耗和開關損耗。
            47A,600V DP MOS功率管--SVS47N60PN
            47A,600V DP MOS功率管--SVS47N60PN
            SVS47N60PN N溝道增強高壓功率MOSFET采用士蘭微電子DP MOS技術新平臺制造,具有很低的傳導損耗和開關損耗。
            11A,650V DP MOS功率管--SVS11N65T/F
            11A,650V DP MOS功率管--SVS11N65T/F
            SVS11N65T/F N溝道增強高壓功率MOSFET采用士蘭微電子DP MOS技術新平臺制造,具有很低的傳導損耗和開關損耗。
            11A,600V DP MOS功率管--SVS11N60T/F
            11A,600V DP MOS功率管--SVS11N60T/F
            SVS11N60T/F N溝道增強高壓功率MOSFET采用士蘭微電子DP MOS技術新平臺制造,具有很低的傳導損耗和開關損耗。使得功率轉換器高功率密度,提高熱行為。
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