龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
- 龍騰N渠道650V,7A超級MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龍騰N渠道650V,16A超級MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龍騰N渠道650V,4A超級MOS管--LND4N65
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
一 概述
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
二 特性
*Low RDS(on)
*Low gate charge(typ.Qg=58.3nC)
*100% UIS tested
*RoHS compliant
三 應用
Power factor correction.
Switched mode power supplies.
LED driver.
四 封裝
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- 龍騰N渠道650V,7A超級MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龍騰N渠道650V,16A超級MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龍騰N渠道650V,4A超級MOS管--LND4N65
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
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銷售電話：0769-81150556
工程電話：0769-85638990
傳真：0769-83351643
地址：東莞市矮嶺冚村沿河東街8號
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