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            龍騰10A,N渠道650V超級MOS管--LND10N65

            產品分類: mos管
              Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
              訂購熱線:400-788-7770
              龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
              龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
              Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
              龍騰N渠道650V,7A超級MOS管--LND7N65D
              龍騰N渠道650V,7A超級MOS管--LND7N65D
              The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
              龍騰N渠道650V,16A超級MOS管--LND16N65
              龍騰N渠道650V,16A超級MOS管--LND16N65
              Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

                   龍騰10A,N渠道650V超級MOS管--LND10N65,LNC10N65,LNE10N65,LNF10N65

                 

                一 概述

                Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

                 

                二 特性

                *Low RDS(on)
                *Low gate charge (typ.Qg=34.2nC)
                *100% UIS tested
                *RoHS compliant

                 

                三 應用

                *Power factor correction.
                *Switched mode power supplies.
                *LED driver.

                 

                四 封裝

                 

                  全國咨詢熱線:400-788-7770

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                  總部地址:東莞市大嶺山鎮矮嶺冚村沿河東街8號

                  佛山辦事處:佛山市順德區容桂鎮細滘德寶北路合安街19號

                 

                  中銘官網:www.susanjnelson.com      

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                驗證碼: 驗證碼
                龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
                龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
                Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
                龍騰N渠道650V,7A超級MOS管--LND7N65D
                龍騰N渠道650V,7A超級MOS管--LND7N65D
                The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
                龍騰N渠道650V,16A超級MOS管--LND16N65
                龍騰N渠道650V,16A超級MOS管--LND16N65
                Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

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                聯系中銘
                全國咨詢熱線:400-788-7770

                銷售電話:0769-81150556
                工程電話:0769-85638990

                傳真:0769-83351643

                郵箱:dgzm699@163.com

                地址:東莞市矮嶺冚村沿河東街8號

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